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ST 2N3905 / 2N3906
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. As complementary types the NPN transistors 2N3903 and 2N3904 are recommended. On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS
Value 40 40 6 200 625 150 - 55 to + 150
Unit V V V mA mW
O
C C
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 09/03/2007
ST 2N3905 / 2N3906
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 1 V, -IC = 0.1 mA at -VCE = 1 V, -IC = 1 mA at -VCE = 1 V, -IC = 10 mA at -VCE = 1 V, -IC = 50 mA at -VCE = 1 V, -IC = 100 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 10 A Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 A Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA Gain Bandwidth Product
at -VCE = 20 V, -IC = 10 mA, f = 100 MHz
Symbol 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCEsat -VCEsat -VBEsat -VBEsat 2N3905 2N3906 fT fT Ccb Ceb RthA
Min. 30 60 40 80 50 100 30 60 15 30 40 40 6 200 250 -
Max. 150 300 50 50 0.25 0.4 0.85 0.95 4.5 10 250
1)
Unit nA nA V V V V V V V MHz MHz pF pF K/W
Collector Base Capacitance at -VCB = 5 V, f = 100 KHz Emitter Base Capacitance at -VEB = 0.5 V, f = 100 KHz Thermal Resistance Junction to Ambient
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 09/03/2007
ST 2N3905 / 2N3906
DC Current Gain
2 TJ=125 C 1
hFE (Normalized)
VCE=1V
25 C
-55 C
0.2 0.1 0.1
1
10
100
200
IC (mA)
Collector Saturation Region
1
TJ=25 C
0.8
I C=1mA
30mA 100mA
0.6
VCE ( V )
0.4
10mA
0.2 0 0.001 0.1 1 10
IB (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 09/03/2007

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